Chemical vapor deposition method and related material

ABSTRACT

A process for chemical vapor deposition includes depositing a film using a metal β-diketonate complex and an α,β-unsaturated alcohol. The metal β-diketonate complex and the α,β-unsaturated alcohol is contacted on the substrate at the same time, at different times or alternately.

[0001] This application claims the benefit of Japanese PatentApplication No. 2000-265521, filed Sep. 1, 2000 in Japan, which ishereby incorporated by reference for all purposes as if fully set forthherein.

BACKGROUND OF THE INVENTION

[0002] 1. Field of the Invention

[0003] This invention relates to chemical vapor deposition methods, andmore particularly, to materials used in chemical vapor depositionmethods as well as films and device elements fabricated using thechemical vapor deposition method.

[0004] 2. Discussion of the Related Art

[0005] Chemical vapor deposition (CVD) is a widely used method tomass-produce metal type films. Materials used in CVD include, forexample, silane, arsine, diborane and ammonia, which are gases at roomtemperature, or is limited to liquids such as tetraetokissilane (TEOS)or trimethylgalium (TMG), which can easily be vaporized.

[0006] Recently, the excellent performance of CVD has been recognizedand used in many different areas. It has been researched extensively,especially in the semiconductor field. Materials such as transitionmetal compounds and alkali metal compounds, which have not previouslybeen considered candidate material for use in CVD, are now proposed.

[0007] However, the above mentioned transition metal compounds andalkali metal compounds do not have associated organic metals (such asalkyl metals similar to trimethylaluminum) with appropriate vaporpressure. Thus, the use of associated metal complexes, especially theβ-diketone complex, has been proposed for use as a material for CVD.

[0008] The proposed metal complexes include for example, DPM₂Ca, DPM₂Sr,DPM₂Ba, DPM₂Ca:triene, DPM₂Sr:teranene, DPM₂Ba:teraene, DPM₂Pb:triene,DPM₃Ru:triene, DPM₃Ru:tetraene, DPM₂Pb, DPM₂ (i-OPr)2 Ti, DPM₃Ru,Hfac₂Pt, HfacCu:TMVS, HfacCu:ATMS, HfacCu:BTMSA, DPM₄Zr, DPM₄Hf, DPM₃La,DPM₃Bi.

[0009] However, there are problems with these CVD materials.

[0010] For example, the useful temperature range to form metal films bythermal decomposition of the material near the substrate where the filmis to be formed is very narrow.

[0011] In addition, low temperature film formation is often required inthe manufacture of components that contain semiconductors. When thedecomposition temperature is high, the CVD material decomposes at alocation far from the substrate on which the film must be formed. Sincethe reaction does not occur at the substrate surface, the film surfaceuniformity is then reduced. For example, when a film is deposited on arough surface with bumps and dips, it may not coat the bottoms of thesuperficial indentations when the decomposition temperature is high.Even if the film forms, it may not be uniform and may be bumpy. Incurrent semiconductor processes, a design rule of below 0.5 microns isbecoming a standard, and it is often difficult or impossible to depositfilms that meet this standard when the decomposition temperature ishigh.

[0012] On the other hand, these CVD materials often do not decomposeefficiently at low temperatures, so low temperature processes oftencannot achieve the required film properties.

SUMMARY OF THE INVENTION

[0013] Accordingly, the present invention is directed to a chemicalvapor deposition (CVD) method and related materials that substantiallyobviates one or more of the problems due to limitations anddisadvantages of the related art.

[0014] An advantage of the present invention is a film fabricationtechnology that allows the formation of high quality films using CVD ofa metal β-diketonate complex.

[0015] Additional features and advantages of the invention will be setforth in the description which follows, and in part will be apparentfrom the description, or may be learned by practice of the invention.The objectives and other advantages of the invention will be realizedand attained by the scheme particularly pointed out in the writtendescription and claims hereof as well as the appended drawings.

[0016] To achieve these and other advantages and in accordance with thepurpose of the present invention, as embodied and broadly described, aprocess for chemical vapor deposition comprises depositing a film usinga metal β-diketonate complex and an α,β-unsaturated alcohol.

[0017] In another aspect, the present invention includes a process forchemical vapor deposition for forming a film on a substrate comprisingcontacting a metal β-diketonate complex and an α,β-unsaturated alcoholat the same time, at different times or alternately on the substrate.

[0018] It is to be understood that both the foregoing generaldescription and the following detailed description are exemplary andexplanatory and are intended to provide further explanation of theinvention as claimed.

BRIEF DESCRIPTION OF THE DRAWINGS

[0019] These and other objects of the invention will be apparent fromthe following detailed description of the embodiments of the presentinvention with reference to the accompanying drawings.

[0020] In the drawings:

[0021]FIG. 1 is a schematic of the chemical vapor deposition system; and

[0022]FIG. 2 is a graph depicting the relationship between the intensityoutput of the elemental analysis system versus the substratetemperature.

DETAILED DESCRIPTION OF ILLUSTRATED EMBODIMENTS

[0023] Reference will now be made in detail to the preferred embodimentsof the present invention, examples of which are illustrated in theaccompanying drawings.

[0024] The problem described in the prior art above relates to thechemical vapor deposition method. It is solved by a chemical vapordeposition (CVD) method that uses metal β-diketonate complexes andα,β-unsaturated alcohol. In the CVD method, the metal β-diketonatecomplex and α,β-unsaturated alcohol are contacted at the same time, atdifferent times or alternately, on the substrate surface to form a filmon the base substrate.

[0025] Moreover, a supplemental material for chemical vapor depositionis provided where the supplemental material is the α,β-unsaturatedalcohol and the supplemental material is used with a metal β-diketonatecomplex during chemical vapor deposition to form a film.

[0026] A supplemental material for chemical vapor deposition is providedwhere the supplemental material is the α,β-unsaturated alcohol and thesupplemental material and the metal β-diketonate complex are contactedat the same time, at different times or alternately, on a base substrateto form a film during chemical vapor deposition.

[0027] In other words, if a metal β-diketonate complex is used for CVDto form films, then if α,β-unsaturated alcohol is also used, a highquality film forms even at low substrate (decomposition) temperature.The film thus formed has high step uniformity.

[0028] The present invention requires the use of α,β-unsaturatedalcohol. Just any alcohol (compound containing OH base) can not be used.It is imperative that α,β-unsaturated alcohol be used. Among suchalcohols, the compound expressed in the formula (I) below is described.

[0029] where R₁, R₂, R₃, R₄, and R₅ are chosen from the base groups X(halogens), H, alkyl bases and silicon type compounds, and each can bethe same or different.

[0030] It is especially desirable that the α,β-unsaturated alcohol beone or two types chosen from the following: aryl alcohol, crotylalcohol, cis-2-hexen-1-ol, trans-2-hexen-1-ol, 3-methyl-2-butene-1-ol,1-butene-3-ol, 1-pentene-3-ol, 1-hexen-3-ol, 3-hexen-2, 5-diol,2-methyl-3-butene-2-ol, 2, 4-hexadiene-1-ol.

[0031] The complex used in the present invention is the metalβ-diketonate complex. It is the compound expressed by the formula (II)below.

[0032] where R₆, R₇, R₈, R₉ and R are chosen from the base groups X(halogens), H, alkyl bases, silicon type compounds, and each base can bethe same or different; n is an integer from 1-4 and m is an integer from1-5; and M is a metal.

[0033] Specifically, the β-diketone of the metal β-diketonate complex ischosen from a group of chemicals that include acetylacetone,dipivaloylmethane, hexafluoroacetylacetone and trifluoroacetylacetone.

[0034] The films obtained in the present invention include metal films,metal oxide films, metal nitride films, or metal carbide films. Forexample, the film can be any of the following: a compound oxide filmcontaining Ru and Sr; a compound oxide film containing Ti, Ba and Sr; acompound oxide film containing Ti and Bi; a compound oxide filmcontaining Sr or Ta and Bi; a compound oxide film containing Sr, Ta, Nband Bi; a compound oxide film containing Pb, Zr and Ti; a filmcontaining as the main component Zr, Hf or La; a conductive filmcontaining as a main component Ru, Pt, or Ir; or a conductive filmcontaining Cu as a main component.

[0035] Moreover, device elements such as LSI can be obtained fromspecific processing of the film fabricated from the chemical vapordeposition method described in the present invention.

[0036] The chemical vapor deposition method of the present inventionincludes a chemical vapor deposition method that uses metal β-diketonatecomplexes and α,β-unsaturated alcohol. Specifically, the chemical vapordeposition method involves contacting the substrate with vaporized metalβ-diketonate complex and vaporized α,β-unsaturated alcohol, at the sametime, at different times or alternately to form films.

[0037] The supplemental material used in the chemical vapor depositionmethods of the present invention is a supplemental material used withthe metal β-diketonate complex during chemical vapor deposition to formfilms. This supplemental material is α,β-unsaturated alcohol. Inparticular, the supplemental material is used so that it contacts thesubstrate at the same time, at different times or alternately withvaporized metal β-diketonate during chemical vapor deposition to formfilms. This supplemental material is α,β-unsaturated alcohol.

[0038] The α,β-unsaturated alcohol used in the present invention can beany α,β-unsaturated alcohol. However, the compound shown in equation (I)above is preferred. Moreover, one or two different types of theα,β-unsaturated alcohol chosen from the following group is preferred:aryl alcohol (CH₂═CH—CH₂—OH), crotyl alcohol (CH₃CH═CH—CH₂OH),cis-2-hexen-1-ol (CH₃CH₂CH₂CH═CH—CH₂OH), trans-2-hexen-1-ol(CH₃CH₂CH₂CH═CH—CH₂OH), 3-methyl-2-butane-1-ol (CH₃—C(CH₃)═CH—CH₂OH),1-butane-3-ol (CH₂═CH—CH(OH)—CH₃), 1-pentene-3-ol(CH₂═CH—CH(OH)—CH₂CH₃), 1-hexen-3-ol (CH₂═CH—CH(OH)—CH₂CH₂CH₃),3-hexen-2, 5-diol (CH₃—CH(OH)—CH═CH—CH(OH)—CH₃), 2-methyl-3-butene-2-ol((CH₂═CH—C(CH₃)(OH)—CH₃), 2,4-hexadiene-1-ol (CH₃—CH═CH—CH═CH—CH₂OH).

[0039] The complex in the present invention is the metal β-diketonatecomplex. Among these, the compound shown in equation (II) above ispreferred. Specifically, the β-diketone in the metal diketonate complexchosen from the following is preferred: acetylacetone,dipivaloylmethane, hexafluoroacetylacetone, trifluoroacetylacetone.

[0040] The films obtained in the present invention are, for example,metal films, metal oxide films, metal nitride films, or metal carbidefilms. For example, the film can be any of the following: a compoundoxide film containing Ru and Sr; a compound oxide film containing Ti, Baand Sr; a compound oxide film containing Ti and Bi; a compound oxidefilm containing Sr, Ta and Bi; a compound oxide film containing Sr, Ta,Nb and Bi; compound oxide film containing Pb, Zr and Ti; a filmcontaining as the main component Zr, Hf or La; a conductive filmcontaining as a main component Ru, Pt or Ir; or a conductive filmcontaining Cu as a main component.

[0041] Also, device elements such as LSI can be obtained from specificprocessing of the film fabricated from the chemical vapor depositionmethod described in the present invention.

[0042] In the following, many examples of the present invention will bedescribed and explained.

EXAMPLE 1

[0043]FIG. 1 is a schematic of the system used for the chemical vapordeposition method in the present invention.

[0044]FIG. 1 shows containers 1, 2, 3 and 4 that can be used as avaporizer, a vacuum pump 5, gas flow controllers 6, a substrate 7, aheater 8, and a reaction furnace 9. The vacuum pump 5 is connected, viavalves, to the reaction furnace 9 and to the containers. The containers1, 2, 3 and 4 are connected to the reaction furnace 9 through valves.The substrate 7 is over the heater 8 in the reaction furnace 9.

[0045] We fabricated Sr films on the substrate that was heated to a settemperature using the equipment shown in FIG. 1.

[0046] To grow the Sr film, DPM₂Sr:tetanene was placed in container 2and heated to 130° C. At the same time, nitrogen gas was supplied at arate of 100 ml/min, and DPM₂Sr:tetanene was vaporized.

[0047] Also, at the same time as 1-hexen-3-ol was placed in container 3and heated to 35° C., nitrogen gas was supplied at a rate of 20 ml/min.As a result, Sr film was formed on the substrate 7.

[0048] This Sr film was measured using x-ray analysis and the datapoints are shown as diamond-shaped points in FIG. 2. The y-axis is theintensity strength ratio and the x-axis is the substrate temperature (°C.). As a result, as can be seen, satisfactory films can be readilyformed at a low substrate temperature of 300-350° C. using CVD.

COMPARATIVE EXAMPLE 1

[0049] As a comparative example to Example 1, 1-hexen-3-ol was not used.All other procedures were conducted in the same manner as in example 1above and an Sr film was formed on the substrate 7. This Sr film wasmeasured using x-rays analysis and the datapoints are shown ascircle-shaped points in the graph of FIG. 2.

[0050] The results show that the intensity of this Sr film is lower thanthat of Example 1. In other words, the beneficial action of 1-hexen-3-olon the decomposition of DPM₂Sr:teraene in the lower temperature regimeis evident.

COMPARATIVE EXAMPLE 2

[0051] As another comparative example, n-propanol was used in place of1-hexen-3-ol. All other procedures were conducted in the same manner asin Example 1 above and an Sr film was formed on the substrate 7. This Srfilm was measured using x-ray analysis and the data points are shown assquare-shaped points in the graph of FIG. 2.

[0052] The results show that the intensity of this Sr film is lower thanthat of Example 1. In other words, the low temperature decompositionaction of 1-hexen-3-ol on DPM₂Sr:teraene is not simply due to the OHbase in the alcohol.

COMPARATIVE EXAMPLE 3

[0053] In this comparative example, 3-hexanol was used instead of1-hexen-3-ol. All other procedures were conducted in the same manner asin Example 1 above and an Sr film was formed on the substrate 7. This Srfilm was measured using x-ray analysis and is shown as x-shaped pointsin the graph of FIG. 2.

[0054] The results show that the intensity of this Sr film is lower thanthat of example 1. In other words, despite the fact that the differencebetween 1-hexen-3-ol and 3-hexanol is merely the presence or absence ofdouble bonds, the low temperature decomposition action of 1-hexen-3-olon DPM₂Sr:teraene is significantly different from that of 3-hexanol onDPM₂Sr.

EXAMPLES 2-12

[0055] The method described in example 1 was used with two differences.Instead of placing 1-hexen-3-ol in container 3, one of theα,β-unsaturated alcohols listed below was placed in container 3 andheated to 35-130° C. Also, the flow rate of nitrogen gas was changed to20 ml/min. An Sr film was formed on substrate 7.

[0056] Example 2: aryl alcohol (CH₂═CH—CH₂—OH)

[0057] Example 3: crotyl alcohol (CH₃CH═CH—CH₂OH)

[0058] Example 4: cis-2-hexen-1-ol (CH₃CH₂CH₂CH═CH—CH₂OH)

[0059] Example 5: trans-2-hexen-1-ol (CH₃CH₂CH₂CH═CH—CH₂OH)

[0060] Example 6: 3-methyl-2-butane-1-ol (CH₃—C(CH₃)═CH—CH₂OH)

[0061] Example 7: 1-butane-3-ol (CH₂═CH—CH(OH)—CH₃)

[0062] Example 8: 1-pentene-3-ol (CH₂═CH—CH(OH)—CH₂CH₃)

[0063] Example 9: 1-hexen-3-ol (CH₂═CH—CH(OH)—CH₂CH₂CH₃)

[0064] Example 10: 3-hexen-2, 5-diol (CH₃—CH(OH)—CH═CH—CH(OH)—CH₃)

[0065] Example 11: 2-methyl-3-butene-2-ol ((CH₂═CH—C(CH₃)(OH)—CH₃)

[0066] Example 12: 2,4-hexadiene-1-ol (CH₃—CH═CH—CH═CH—CH₂OH)

[0067] The results confirm the facilitation action of the decompositionreaction of metal diketonate complex by α,β-unsaturated alcohol in thelow temperature regime, at a substrate temperature below 450° C.

EXAMPLES 13-31

[0068] The method described in Example 1 was used with the differencethat DPM₂Sr:teranene was replaced by one of the metal β-diketonatecomplexes listed below to form a metal film on the surface of substrate7.

[0069] Example 13: DPM₂Ca

[0070] Example 14: DPM₂Sr

[0071] Example 15: DPM₂Ba

[0072] Example 16: DPM₂Ca:triene

[0073] Example 17: DPM₂Sr:teranene

[0074] Example 18: DPM₂Ba:teraene

[0075] Example 19: DPM₂Pb:triene

[0076] Example 20: DPM₃Ru:triene

[0077] Example 21: DPM₃Ru:tetraene

[0078] Example 22: DPM₂Pb

[0079] Example 23: DPM₂ (i-OPr)2 Ti

[0080] Example 24: DPM₃Ru, Hfac₂Pt

[0081] Example 25: HfacCu:TMVS

[0082] Example 26: HfacCu:ATMS

[0083] Example 27: HfacCu:BTMSA

[0084] Example 28: DPM₄Zr

[0085] Example 29: DPM₄Hf

[0086] Example 30: DPM₃La

[0087] Example 31: DPM₃Bi

EXAMPLE 32

[0088] We fabricated compound oxide films containing Sr and Ru on asubstrate 7 using the equipment shown in FIG. 1. In this example, DPM₃Ruwas place in container 1 and heated to 100° C., while simultaneously,nitrogen gas was supplied at a rate of 100 ml/min, and DPM₃Ru wasvaporized. Also, at the same time, DPM₂Sr:teranene was place incontainer 2 and heated to 130° C., while simultaneously, nitrogen gaswas supplied at a rate of 100 ml/min, and DPM₂Sr:teranene was vaporized.Also, at the same time, 1-hexen-3-ol was placed in container 3 andheated to 35° C., while nitrogen gas was supplied at a rate of 20ml/min.

[0089] Finally, oxygen gas was supplied to the area in front of thesubstrate.

[0090] As a result, a compound oxide film containing both Ru and Sr(SrRuO₃) formed on the substrate 7.

[0091] It was possible to set the substrate temperature in the presentexample lower by 50-100° C. lower than the temperature needed whenl-hexen-3-ol is not used. Even at this low temperature, a good qualityoxide film could form.

EXAMPLES 33-34

[0092] The method described in Example 32 was used to form oxide filmson substrate 7. The materials placed in containers 1, 2, 3 and 4 in eachexperiment are shown in Table 1 below. TABLE I 1 2 4 3 Ba, Sr, Ti, ODPM2Ba:tetraene DPM2Sr:tetraene DPM2Ti(i-o-Pr)2 1-pentene-3-ol Bi, Ti, ODPM3Bi — DPM2Ti(i-o-Pr)2 Crotylalcohol Bi ,Ti ,O Me3Bi/Heptane —DPM2Ti(i-o-Pr)2 1-Hexen-3-ol Sr, Ta, Bi, O Me3Bi/Heptane DPM2Sr:tetraeneTa(OEt)5 1-Hexen-3-ol Pb, Zr, Ti, O Et4Pb DPM4Zr Ti(i-o-Pr)41-Hexen-3-ol Zr, O — DPM4Zr — 1-Hexen-3-ol Hf, O — DPM4Hf — 1-Hexen-3-olLa, O — DPM3La — 1-Hexen-3-ol Si, Zr, O Si(OEt)4 DPM4Zr — 1-Hexen-3-olSi, Hf, O HSi(Net2)3 DPM4Hf — 1-Hexen-3-ol Si, La, O HSi(Net2)3 DPM3La —1-Hexen-3-ol

[0093] The substrate temperature in the present example was set 50-100°C. lower than when α,β-unsaturated alcohol is not used. Even at this lowtemperature, a good quality oxide film can be formed.

EXAMPLES 44-48

[0094] In these examples, one of the metal β-diketonate complexes listedbelow was used instead of DPM₂Sr:teraene. All other procedures wereconducted in the same manner as in example 1 above. Conductive filmswere formed on the substrate 7. Conductive film metal β-diketonatecomplex RuO_(x) DPM₃Ru Pt Hfac₂Pt IrO_(x) Acac₃Ir Cu Hfac₂Cu CuHfacCu:TMVS

[0095] The substrate temperature in the present example was set 50-100°C. lower than when 1-hexen-3-ol is not used. However, even at this lowtemperature, a good quality oxide film can be formed.

[0096] Accordingly, when forming films with CVD using metalβ-diketonate, high quality films can be formed at low temperature. Thefilms also have high degree of step uniformity.

[0097] The present invention thus provides at least the following.First, the present invention provides a film technology to form highquality films. Second, the present invention provides a film technologyto form films with high step uniformity. Third, the present inventionprovides a film technology to widen the range of the heat decompositiontemperature to form films. Fourth, the present invention provides a filmtechnology to form quality films at low temperature. Fifth, the presentinvention provides a film technology that will allow the formation ofquality films using the metal β-diketonate complex with CVD.

[0098] It will be apparent to those skilled in the art that variousmodifications and variation can be made in the present invention withoutdeparting from the split or scope of the invention. Thus, it is intendedthat the present invention cover the modifications and variations ofthis invention provided they come within the scope of the appendedclaims and their equivalents.

What is claimed is:
 1. A process for chemical vapor depositioncomprising depositing a film using a metal β-diketonate complex and anα,β-unsaturated alcohol.
 2. A process for chemical vapor deposition forforming a film on a substrate comprising contacting a metal β-diketonatecomplex and an α,β-unsaturated alcohol at the same time, at differenttimes or alternately on the substrate.
 3. A process for chemical vapordeposition according to any one of claims 1 and 2 wherein theα,β-unsaturated alcohol is a compound characterized as:

where R₁, R₂, R₃, R₄ and R₅ are chosen from the base groups X(halogens), H, alkyl bases and silicon type compounds, and each can bethe same or different.
 4. A process for chemical vapor depositionaccording to any one of claims 1-3, wherein the α,β-unsaturated alcoholis one or two types selected from the group consisting of: aryl alcohol,crotyl alcohol, cis-2-hexen-1-ol, trans-2-hexen-1-ol,3-methyl-2-butene-1-ol, 1-butene-3-ol, 1-pentene-3-ol, 1-hexen-3-ol,3-hexen-2, 5-diol, 2-methyl-3-butene-2-ol, 2, 4-hexadiene-1-ol.
 5. Aprocess for chemical vapor deposition according to any one of claims 1and 2 wherein the metal β-diketonate complex is a compound characterizedas:

where R₆, R₇, R₈, R₉ and R are chosen from the base groups X (halogens),H, alkyl bases and silicon type compounds, and each can be the same ordifferent, n is an integer from 1-4 and m is an integer from 0-5, and Mis a metal.
 6. A process for chemical vapor deposition according to anyone of claims 1, 2 and 5 wherein β-diketone of the metal β-diketonatecomplex is selected from the group consisting of acetylacetone,dipivaloylmethane, hexafluoroacetylacetone, trifluoroacetylacerone.
 7. Aprocess for chemical vapor deposition according to any one of claims1-6, wherein the film includes one of a metal film, a metal oxide film,a metal nitride film, a metal and a metal carbide film.
 8. A materialfor use in chemical vapor deposition, the material being characterizedas an α,β-unsaturated alcohol and used with a metal β-diketonate complexto form films.
 9. A material for use in chemical vapor deposition toform a film wherein the material is characterized as an α,β-unsaturatedalcohol and used with a metal β-diketonate complex, and theα,β-unsaturated alcohol and the metal β-diketonate complex contact thesubstrate at the same time, at different times or alternately to formthe film.
 10. A material for use in chemical vapor deposition process inclaim 8 or 9, wherein the α,β-unsaturated alcohol is a compoundcharacterized as:

where R₁, R₂, R₃, R₄, and R₅ are chosen from the base groups X(halogens), H, alkyl bases and silicon type compounds, and each can bethe same or different.
 11. A material for use in chemical vapordeposition process in any one of claims 8-10 wherein the α,β-unsaturatedalcohol is one or two types selected from the group consisting of: arylalcohol, crotyl alcohol, cis-2-hexen-1-ol, trans-2-hexen-1-ol,3-methyl-2-butene-1-ol, 1-butene-3-ol, 1-pentene-3-ol, 1-hexen-3-ol,3-hexen-2, 5-diol, 2-methyl-3-butene-2-ol, 2, 4-hexadiene-1-ol.
 12. Afilm fabricated by the chemical vapor deposition process in any one ofclaims 1-6, wherein the film includes a compound oxide film containingRu and Sr.
 13. A film fabricated by the chemical vapor depositionprocess in any one of claims 1-6, wherein the film includes a compoundoxide film containing Ti, Ba and Sr.
 14. A film fabricated by thechemical vapor deposition process in any one of claims 1-6, where thefilm includes a compound oxide film containing Ti and Bi.
 15. A filmfabricated by the chemical vapor deposition process in any one of claims1-6, wherein the film includes a compound oxide film containing Sr, Taand Bi.
 16. A film fabricated by the chemical vapor deposition processin any one of claims 1-6, wherein the film includes a compound oxidefilm containing Sr, Ta, Nb and Bi.
 17. A film fabricated by the chemicalvapor deposition process in any one of claims 1-6, wherein the filmincludes a compound oxide film containing Pb, Zr and Ti.
 18. A filmfabricated by the chemical vapor deposition process in any one of claims1-6, wherein the film contains as a main component Zr, Hf or La.
 19. Afilm fabricated by the chemical vapor deposition process in any one ofclaims 1-6, where the film includes a conductive material and containsRu, Pt or k as a main component.
 20. A film fabricated by the chemicalvapor deposition process in any one of claims 1-6, wherein the filmincludes a conductive material and contains Cu as a main component. 21.A device fabricated from films formed using the chemical vapordeposition process described in any one of claims 1-6.